Rigorous extraction tunability of Si-integrated Ba0.3Sr0.7TiO3 thin film up to 60 GHz

Freddy Ponchel (1) , Jean-François Legier (2) , Caroline Soyer (2) , Denis Remiens (2) , Jean Midy (1) , Tuami Lasri (2) , Guillaume Guéguan (1)

1 ST-TOURS - STMicroelectronics [Tours]
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

400-nm-thick Ba0.3Sr0.7TiO3 thin films are deposited on high resistivity silicon by in situ radio frequency magnetron sputtering. Coplanar waveguides with 1µm slot width are designed, with accurate knowledge frequency losses behavior, to determine ferroelectric thin-films properties up to 60 GHz. Permittivity, loss tangent, and tunability are extracted through measurements and home made finite element analysis. Tunability of 33% and 29%, with 30 V maximum applied voltage-electric field of 300 kV/cm3, are measured at 5 GHz and 60 GHz, respectively, while the dielectric losses evolve from 0.5% to 5%. A brief highlight is proposed about tunable silicon integrated quarter wavelength transformer potentialities for impedance matching.

Domaines: Physique [physics]

Freddy Ponchel, Jean-François Legier, Caroline Soyer, Denis Remiens, Jean Midy, et al.. Rigorous extraction tunability of Si-integrated Ba0.3Sr0.7TiO3 thin film up to 60 GHz. Applied Physics Letters, 2010, 96, pp.252906-1-3. ⟨10.1063/1.3454772⟩. ⟨hal-00549520⟩