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Deep structural analysis of novel BGaN material layers grown by MOVPE

Abstract : BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at room temperature was measured. At higher boron content, cubic BGaN nano-sized clusters were identified. The clusters are 3 nm wide, homogeneously distributed in size and in density and coherent with the surrounding wurtzite BGaN matrix. Their boron composition was estimated by EDX.
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S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, et al.. Deep structural analysis of novel BGaN material layers grown by MOVPE. Journal of Crystal Growth, Elsevier, 2010, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩

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