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Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

Abstract : Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of threading dislocations. The growth of AlGaN/GaN layers is uniform and shows sharp interfaces between the AlGaN and GaN epilayers. AlGaN nanodots/nanowires, which are formed at the apexes of the nano-pyramids/nano-ridges, are found to be homogeneous in size and to have a higher aluminum mole fraction than the surrounding material. In contrast, the InGaN/GaN growth shows no quantum dots at the apexes of the nanostructures. We found that the growth facets of different Miller’s indices are formed on the InGaN/GaN nano-ridges. Energy dispersive X-ray spectroscopy (EDX) shows higher indium incorporation at the intersection of the growth facets. Cathodoluminescence measurements show enhanced luminescence intensity from InGaN multi-quantum wells (MQWs) grown on the nanostructure compared to that from InGaN MQWs grown on an unpatterned area.
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https://hal.archives-ouvertes.fr/hal-00554254
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Submitted on : Thursday, December 2, 2021 - 9:16:45 PM
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W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, et al.. Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth. Journal of Crystal Growth, Elsevier, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

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