HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Journal articles

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

Abstract : Using elastic scattering theory we show that a small set of energy dispersive x-ray spectroscopy (EDX) measurements is sufficient to experimentally evaluate the scattering function of electrons in high-angle annular dark field scanning transmission microscopy (HAADF-STEM). We then demonstrate how to use this function to transform qualitative HAADF-STEM images of InGaN layers into precise, quantitative chemical maps of the indium composition. The maps obtained in this way combine the resolution of HAADF-STEM and the chemical precision of EDX. We illustrate the potential of such chemical maps by using them to investigate nanometer-scale fluctuations in the indium composition and their impact on the growth of epitaxial InGaN layers.
Document type :
Journal articles
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-00747027
Contributor : Jean Paul Salvestrini Connect in order to contact the contributor
Submitted on : Thursday, May 12, 2022 - 4:55:43 PM
Last modification on : Friday, May 13, 2022 - 2:07:48 PM

File

Pantzas2012.pdf
Files produced by the author(s)

Licence


Distributed under a Creative Commons Attribution - NonCommercial 4.0 International License

Identifiers

Citation

K. Pantzas, G. Patriarche, David Troadec, S. Gautier, T. Moudakir, et al.. Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. Nanotechnology, Institute of Physics, 2012, 23, pp.455707-455716. ⟨10.1088/0957-4484/23/45/455707⟩. ⟨hal-00747027⟩

Share

Metrics

Record views

0

Files downloads

0