AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer

Idriss Abid (1) , Riad Kabouche (1) , Malek Zegaoui (1) , C. Bougerol (2) , Rémi Comyn (3) , Yvon Cordier (3) , F Medjdoub (1, 4)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 NEEL - NPSC - Nanophysique et Semiconducteurs
3 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
4 WIND - IEMN - WIde baNd gap materials and Devices - IEMN

Domaines: Micro et nanotechnologies/Microélectronique

Idriss Abid, Riad Kabouche, Malek Zegaoui, C. Bougerol, Rémi Comyn, et al.. AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356886⟩