Magneto-Electroacoustic Dynamics in a Straintronic Random Access Memory Cell

Vladimir Preobrazhensky , L.M. Krutyansky , Nicolas Tiercelin (1, 2, 3) , Philippe Pernod (1, 2, 3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LIA LICS/LEMAC - Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique
3 AIMAN-FILMS - IEMN - Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN

The straintronic principle of nonvolatile magnetoelectric random access memory (MELRAM) isattracting attention because of the prospect of achieving ultra-low-power consumption in memory devices onits basis. The mechanism of switching magnetic moments by pulse deformation of elastically coupled mag-netic and piezoelectric subsystems is associated with the excitation of acoustic oscillations in memory cells.The oscillation period in nanoscale cells is comparable to the switching time of magnetic moments, whichcan distort the process of recording information. The inf luence of acoustic excitations on the dynamics ofmagnetic switching has been investigated using numerical simulation in relation to a magnetostrictive cell of50 × 50 × 400-nm size on a PMN-PT 011 piezoelectric substrate. The parameters of the control electricalpulses providing stable binary switching of the system magnetic states have been determined

Mots clés: piezoelectric-magnetic; impulse deformation; acoustic oscillations; magnetization switching

Domaines: Physique [physics]; Sciences de l'ingénieur [physics]; Micro et nanotechnologies/Microélectronique

Vladimir Preobrazhensky, L.M. Krutyansky, Nicolas Tiercelin, Philippe Pernod. Magneto-Electroacoustic Dynamics in a Straintronic Random Access Memory Cell. Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2020, 46 (1), pp.38-41. ⟨10.1134/S1063785020010113⟩. ⟨hal-02964497⟩