Impact of forward body-biasing on ultra-low voltage switched-capacitor RF power amplifier in 28 nm FD-SOI - Université Polytechnique des Hauts-de-France Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Circuits and Systems II: Express Briefs Année : 2022

Impact of forward body-biasing on ultra-low voltage switched-capacitor RF power amplifier in 28 nm FD-SOI

Résumé

The Switched-Capacitor Power Amplifier (SCPA) has become a key enabler for modern wireless communication because of its high efficiency, high linearity, and high integrability. This paper discusses the impact of the extended Forward Body-Biasing (FBB) feature in 28 nm FD-SOI technology on Ultra-Low Voltage (ULV) SCPA. A new model of the Drain Efficiency (DE) and System Efficiency (SE) including body-biasing and drivers power consumption is introduced and validated with SpectreRF simulations. FBB on the SCPA improves by up to 14 % and 67 % the SE and transistors area, respectively, compared to a nominally body-biased SCPA under 0.5 V supply voltage at 2.4 GHz, while improving linearity and enhancing PVT variations.
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Dates et versions

hal-03306891 , version 1 (29-07-2021)

Identifiants

Citer

Guillaume Tochou, Andreia Cathelin, Antoine Frappé, Andreas Kaiser, Jan Rabaey. Impact of forward body-biasing on ultra-low voltage switched-capacitor RF power amplifier in 28 nm FD-SOI. IEEE Transactions on Circuits and Systems II: Express Briefs, 2022, 69 (1), pp.50-54. ⟨10.1109/tcsii.2021.3088996⟩. ⟨hal-03306891⟩
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