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Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems

Andy Triwinarko Iyad Dayoub 1 Marie Zwingelstein-Colin Mohamed Gharbi Basma Bouraoui Ygor Fonseca Rafael Nobrega Ulysses Duarte Thiago Raddo Anderson Sanches Murilo Loiola
1 COMNUM - IEMN - COMmunications NUMériques - IEMN
IEMN-DOAE - Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520
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https://hal-uphf.archives-ouvertes.fr/hal-03382857
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Submitted on : Monday, October 18, 2021 - 1:02:01 PM
Last modification on : Friday, December 3, 2021 - 3:56:03 PM

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Andy Triwinarko, Iyad Dayoub, Marie Zwingelstein-Colin, Mohamed Gharbi, Basma Bouraoui, et al.. Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems. 2020 12th International Symposium on Communication Systems, Networks and Digital Signal Processing (CSNDSP), Jul 2020, Porto, France. pp.1-5, ⟨10.1109/CSNDSP49049.2020.9249531⟩. ⟨hal-03382857⟩

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