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Size reduction of InGaN/GaN based led devices as a major challenge for boosting light fidelity frequency bandwidth

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https://hal-uphf.archives-ouvertes.fr/hal-03572369
Contributor : Mylène Delrue Connect in order to contact the contributor
Submitted on : Monday, February 14, 2022 - 11:29:28 AM
Last modification on : Wednesday, March 23, 2022 - 3:51:35 PM

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  • HAL Id : hal-03572369, version 1

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Bandar Alshehri, Karim Dogheche, El Hadj Dogheche. Size reduction of InGaN/GaN based led devices as a major challenge for boosting light fidelity frequency bandwidth. 10th International Conference on Materials for Advanced Technologies, ICMAT 2019, Jun 2019, Marina Bay Sands, Singapore. ⟨hal-03572369⟩

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