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RF reactive sputtering AlN thin film at room temperature for CMOS-compatible MEMS application

Abstract : Aluminum nitride (AlN) is widely used in SAW/FBAR devices, energy harvesting, biosensors, and ultrasonic transducers. The preparation of high-quality AlN film plays the key role on the process integration with CMOS circuits. Here, we report an AlN thin film prepared by RF reactive sputtering at room temperature on substrate with different treatments, which is more suitable and economical for CMOS-compatible MEMS fabrication compared with previous works. The AlN thin film was deposited on Si/SiO 2 /Si 3 N 4 with different surface roughness, which were commonly employed as insulating layers or device layers in CMOS circuits. The morphological characterization by AFM and SEM showed that the AlN thin film was uniform and compact with low roughness and fine grain. The bottom Mo electrode was prepared by DC sputtering at room temperature. In addition, AlN seed layer from the same sputtering process increased the adhesion between the electrode and the substrate, thereby improving the stability of subsequent processes. In summary, we prepared uniform AlN with few defects by a simple and controllable approach. This strategy is potentially applied to CMOS-compatible optical and acoustic devices
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Contributor : Mylène Delrue Connect in order to contact the contributor
Submitted on : Wednesday, February 23, 2022 - 12:03:59 PM
Last modification on : Wednesday, March 23, 2022 - 3:51:35 PM



Wen-Juan Liu, Wei-Jiang Xu, Weizhen Wang, Le-Ming He, Jia Zhou, et al.. RF reactive sputtering AlN thin film at room temperature for CMOS-compatible MEMS application. 2017 Joint IEEE International Symposium on the Applications of Ferroelectrics (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM), May 2017, Atlanta, United States. pp.52-55, ⟨10.1109/ISAF.2017.8000210⟩. ⟨hal-03585665⟩



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