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Poster communications

Comparison of InxGa1-xN/GaN single and multiple quantum well based PIN structures : fabrication and characterization

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https://hal-uphf.archives-ouvertes.fr/hal-03780894
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Submitted on : Monday, September 19, 2022 - 6:31:56 PM
Last modification on : Tuesday, September 20, 2022 - 3:37:02 AM

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  • HAL Id : hal-03780894, version 1

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Bandar Alshehri, Karim Dogheche, Sofiane Belahsene, Gilles Patriache, Abderrahim Ramdane, et al.. Comparison of InxGa1-xN/GaN single and multiple quantum well based PIN structures : fabrication and characterization. European Materials Research Society Spring Meeting, E-MRS Spring 2015, May 2015, Lille, France. ⟨hal-03780894⟩

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