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Design and characterization of power detectors in 55-nm BiCMOS technology for 5G and THz applications

Abstract : Power detectors are the key blocks to establish the power measurement. Therefore, they are considered among the most important circuits in many microwave and millimeter wave applications (such as communication systems, medical equipments, radar systems, etc.). In this context, this thesis presents the design, characterization and theoretical analysis of different diode based power detectors, built in 55nm-BiCMOS technology from STMicroelectronics, in different frequency bands, towards different applications. For 5G applications in the frequency band (35-55) GHz, tunable detectors are designed to be used in different applications, since their parameters can be adjusted. In addition, several topologies of zero bias detectors are designed to help improving the efficiency in the 5G and IoT devices. This can be realized by employing those detectors in envelop tracking circuits which reduce the power consumption of power amplifiers. Two frequency compensated detectors in the frequency bands (140-220) GHz and (450-600) GHz are designed providing stable and high sensitivity value over the whole frequency band of interest. These detectors can be used for on-chip power detection which helps increasing the power measurement efficiency at such high frequencies. These detectors can be also used in THz applications such as THz imaging and radars. Some detectors in this work reach the state of the art performances in several frequency bands, thanks to their original designs executed in STMicroelectronics technology.
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Submitted on : Thursday, December 2, 2021 - 12:57:08 PM
Last modification on : Tuesday, January 4, 2022 - 6:12:25 AM


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  • HAL Id : tel-03463315, version 1


Issa Alaji. Design and characterization of power detectors in 55-nm BiCMOS technology for 5G and THz applications. Micro and nanotechnologies/Microelectronics. Université de Lille, 2020. English. ⟨NNT : 2020LILUI080⟩. ⟨tel-03463315⟩



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