Skip to Main content Skip to Navigation
Conference papers

Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry

Abstract : Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are detectable with this method. Filling time of TSV structures has also been measured.
Document type :
Conference papers
Complete list of metadata

https://hal-uphf.archives-ouvertes.fr/hal-03280231
Contributor : Julie Cagniard Connect in order to contact the contributor
Submitted on : Wednesday, July 7, 2021 - 10:59:34 AM
Last modification on : Saturday, October 9, 2021 - 3:13:43 AM

Identifiers

Citation

Christophe Virgilio, L. Broussous, P. Garnier, Julien Carlier, Pierre Campistron, et al.. Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry. 13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), Sep 2016, Knokke, Belgium. ⟨10.4028/www.scientific.net/SSP.255.129⟩. ⟨hal-03280231⟩

Share

Metrics

Record views

27