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Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry

Abstract : Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are detectable with this method. Filling time of TSV structures has also been measured.
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https://hal-uphf.archives-ouvertes.fr/hal-03280231
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Submitted on : Wednesday, July 7, 2021 - 10:59:34 AM
Last modification on : Wednesday, March 23, 2022 - 3:51:35 PM

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Christophe Virgilio, Lucile Broussous, Philippe Garnier, Julien Carlier, Pierre Campistron, et al.. Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry. 13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), Sep 2016, Knokke, Belgium. ⟨10.4028/www.scientific.net/SSP.255.129⟩. ⟨hal-03280231⟩

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