Skip to Main content Skip to Navigation
Poster communications

Synthesis of In0.1Ga0.9N/GaN and In0.2Ga0.8N/GaN PIN photodiode in single and multiple quantum well absorbent layer configuration : fabrication and characterization

Complete list of metadata

https://hal-uphf.archives-ouvertes.fr/hal-03553190
Contributor : Mylène Delrue Connect in order to contact the contributor
Submitted on : Wednesday, February 2, 2022 - 4:32:20 PM
Last modification on : Wednesday, March 23, 2022 - 3:51:35 PM

Identifiers

  • HAL Id : hal-03553190, version 1

Citation

Bandar Alshehri, Karim Dogheche, Didier Decoster, El Hadj Dogheche. Synthesis of In0.1Ga0.9N/GaN and In0.2Ga0.8N/GaN PIN photodiode in single and multiple quantum well absorbent layer configuration : fabrication and characterization. 15èmes Journées Nano, Micro et Optoélectronique, JNMO 2016, May 2016, Les Issambres, France. ⟨hal-03553190⟩

Share

Metrics

Record views

8