[Invited] Preindustrial GaN devices developed at the nanofabrication center of IEMN

Kathia Harrouche (1, 2) , W Rili (1) , Elodie Carneiro (1) , Jash Mehta (1, 2) , Idriss Abid (1, 2) , F Medjdoub (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 WIND - IEMN - WIde baNd gap materials and Devices - IEMN

Domaines: Micro et nanotechnologies/Microélectronique

Kathia Harrouche, W Rili, Elodie Carneiro, Jash Mehta, Idriss Abid, et al.. [Invited] Preindustrial GaN devices developed at the nanofabrication center of IEMN: [Invited]. Transducers 2021, Jun 2021, online, France. ⟨hal-03256885⟩